bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping o8 100 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldta115tet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldta115tet1g ldta115tet1g o8 3 collec t or 2 emitter 1 base r1 z a b solute maximum ratings (t a= 25 c) parameter symbol limits unit power dissipation junction temperature storage temperature - 100 - z electrical ch aracteristics (t a= 25 c) 1 2 3 sc-89 v cbo v ceo v ebo i c p c tj tstg ? 50 ? 50 ? 5 ? 100 200 150 ? 55 to + 150 v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 ? 50 ? 50 ? 5 ? ? ? ? 100 70 ? ? ? ? ? ? 250 250 100 ? ? ? ? 0.5 ? 0.5 ? 0.3 600 ? 130 v v v a a v ? mh z k ? i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v i c /i b = ? 1ma/ ? 0.1ma i c = ? 1ma , v ce = ? 5v v ce = ? 10v , i e = 5ma , f = 100mh z ? ? characteristics of built-in transistor ? collector-base breakdown voltage emitter-base breakdown voltage collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current transfer ratio input resistance transition frequency
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldta115tet1g 1k 100 50 20 500 200 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) v ce = 5v ta = 25 c ta = 100 c ta = ? 40 c 1 100m 50m 20m 500m 200m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m fig.2 collector-emitter saturation voltage vs. collector current corrector saturation voltage : v ce(sat) (v) collector current : i c (a) i c /i b = 10/1 ta = 25 c ta = 100 c ta = ? 40 c
leshan radio company, ltd. 3/3 ldta115tet1g notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
|
